Optoelectronic CMOS power supply unit for electrically isolated microscale applications


Aktan O., Sarioglu B., Çindemir U., Ünlü S. O., DÜNDAR G., Mutlu Ş., ...Daha Fazla

IEEE Journal on Selected Topics in Quantum Electronics, cilt.17, sa.3, ss.747-756, 2011 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 17 Sayı: 3
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1109/jstqe.2010.2096801
  • Dergi Adı: IEEE Journal on Selected Topics in Quantum Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.747-756
  • Anahtar Kelimeler: Bulk micromachining, CMOS, dc/dc converter circuit, photodiode
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

This paper presents a CMOS power supply unit for electrically isolated microscale applications, where the provision of electrical power is not appropriate through wiring. A miniature fiberoptic platform consisting of an inclined silicon mirror fabricated using bulk micromachining is coupled to the monolithically integrated photodiode/dc-dc converter system, to yield a stand-alone optical power supply. In this approach, the dc/dc converter steps up the voltage of a single CMOS-integrated photodiode to a higher level. A test chip is fabricated using UMC 0.18-μm triple-well CMOS technology to demonstrate the power supply unit. Two different types of photodiodes, namely, a triple-well photodiode and an n-well photodiode are compared. It is found that on-chip triple-well photodiode results in a projected responsivity of 26 mA/W. The dc/dc converter had a maximum efficiency of 56 and is able to boost an input voltage level of 0.5-to-1.2 V. Silicon mirrors coated with 25-nm-thick aluminum are measured to have a reflectivity of 80 for a laser beam at a wavelength of 650 nm. Capability of the overall packaged optoelectronic system, consisting of the optical fiber, silicon mirror, CMOS photodiode, and the dc/dc converter, is demonstrated by generation of an electrical power of 60 μW. © 2006 IEEE.