MOS only simulated grounded negative resistors

Sunca A., ÇİÇEKOĞLU M. O., DÜNDAR G.

2011 34th International Conference on Telecommunications and Signal Processing, TSP 2011, Budapest, Macaristan, 18 - 20 Ağustos 2011, ss.328-331, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/tsp.2011.6043715
  • Basıldığı Şehir: Budapest
  • Basıldığı Ülke: Macaristan
  • Sayfa Sayıları: ss.328-331
  • Anahtar Kelimeler: active resistor, MOS, negative resistor, resistance simulation, tunable resistor
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

In this paper, a number of tunable grounded negative resistor circuits are presented. These new negative resistors exhibit important features such as simplicity, independent tunability and wide frequency range. One of the introduced negative resistor circuits is simulated using TSMC 0.18m process parameters and compared to a couple of other negative resistors in the literature. © 2011 IEEE.