A new approach to modeling statistical variations in MOS transistors

Tulunay, Gulin; DÜNDAR, GÜNHAN; Ataman, Atilla

doi:10.1109/iscas.2002.1009951

A new approach to modeling statistical variations in MOS transistors

Tulunay G., DÜNDAR G., Ataman A.

Proceedings - IEEE International Symposium on Circuits and Systems, cilt.1, ss.757-760, 2002 (Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 1
Basım Tarihi: 2002
Doi Numarası: 10.1109/iscas.2002.1009951
Dergi Adı: Proceedings - IEEE International Symposium on Circuits and Systems
Derginin Tarandığı İndeksler: Scopus
Sayfa Sayıları: ss.757-760
Boğaziçi Üniversitesi Adresli: Evet

Özet

In this paper, a new methodology for modeling transistor mismatch in terms of systematic and random variations is proposed. The model is based on the variations in physical parameters. Although the methodology is the same, regardless of the technology used, the coefficients of the equations used in the model will vary due to the process. Results of the model, and a comparison between the proposed model and the well-known Pelgrom model is presented.