Analytical current model for dual-gate MOSFET

Karahaliloǧlu K., DÜNDAR G.

8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001, Malta, 2 - 05 Eylül 2001, cilt.2, ss.1015-1019, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 2
  • Basıldığı Ülke: Malta
  • Sayfa Sayıları: ss.1015-1019
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

An analytical current model for dual-gate MOSFET structures is presented. The standard method for MOSFET modeling is investigated for dual and multi-gate MOSFETs. For the difficulties arising in such methods, an energy-based approximation is introduced to get a quasi-Fermi potential solution that will be valid along the channel. An explicit current expression for the dual gate MOSFET is obtained by making use of this solution. The analytical results are compared with the results of the PISCES 2D device simulator program, for various biasing conditions. © 2001 IEEE.