Scanning probe lithography-based mix-and-match technique as an enabling tool for the pilot production of nanowire-based next-generation electromechanical sensors

Altinmakas T., ÖZDEN M., Pakzad S. Z., Pietscher H., Basseri J., Rangelow I. W., ...Daha Fazla

Novel Patterning Technologies 2026, California, Amerika Birleşik Devletleri, 23 - 26 Şubat 2026, cilt.13982, (Tam Metin Bildiri) identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 13982
  • Doi Numarası: 10.1117/12.3092793
  • Basıldığı Şehir: California
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Anahtar Kelimeler: cryogenic etching, direct laser writing, field-emission scanning probe lithography, mix-and-match lithography, NEMS, silicon nanowire
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

This work reports multiscale devices with nanoscale components, such as nanowires, that act as highly sensitive transducers, while the microscale architecture functions as a physical interface to the macroscopic world. In addition to electromechanical devices, junctionless field-effect transistors obtained by a mix-and-match lithography approach are discussed as an example of advanced semiconductor miniaturization. Such efforts rely on scalable nanopatterning techniques that achieve sub-10 nm resolution while minimizing proximity effects and energy consumption. Hence, the latter is demonstrated through a combination of field-emission scanning probe lithography (FE-SPL) with maskless photolithography. The results demonstrate FE-SPL as a viable, energy-efficient alternative to electron-beam lithography for scalable nanoscale transistor fabrication.