Spin-based data storage
Comprehensive Nanoscience and Nanotechnology, Elsevier, ss.67-122, 2019
- Yayın Türü: Kitapta Bölüm / Araştırma Kitabı
- Basım Tarihi: 2019
- Doi Numarası: 10.1016/b978-0-12-803581-8.10098-0
- Yayınevi: Elsevier
- Sayfa Sayıları: ss.67-122
- Anahtar Kelimeler: 3D magnetic memory, Bit-patterned media, Directed self-assembly, Energy-assisted magnetic recording, Fabrication, Field-switch MRAM, Giant magnetoresistance (GMR), Hard disk drive, Magnetic race track memory, Magnetic random access memory (MRAM), Magnetic storage, Magnetic tunnel junction, Nanoimprint, Spin-based storage, Spin-torque MRAM, Spin-transfer, Toggle-switch MRAM, Tunneling magnetoresistance (TMR)
- Boğaziçi Üniversitesi Adresli: Evet
Özet
Spin-based memory offers a unique combination of low cost, low power, high speed, and high density solutions to current data storage needs. However, the demand to increase storage density and improve latency is driving an exhaustive study of alternative storage schemes for the future generations of magnetic memory devices. In this chapter, we focus on some of these advanced technologies such as spin torque magnetic random access memory, patterned media, and energy assisted magnetic recording. We will also discuss the possible evolution of magnetic memory devices into three dimensional architectures, such as race-track memory. We conclude with a discussion of the processing challenges for implementation of these devices, which would require a combination of existing lithography technologies and promising new approaches such as nano-imprint lithography and block-copolymer self-assembly.