Challenges in electrical detection of spin-orbit torque in Ir20Mn80/Pt hetero-structures

Goksal I., Piskin H., Kocaman B., Akin K., Cay D., Selvi E., ...Daha Fazla

International Journal of Applied Electromagnetics and Mechanics, cilt.73, sa.1, ss.3-13, 2023 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 73 Sayı: 1
  • Basım Tarihi: 2023
  • Doi Numarası: 10.3233/jae-220298
  • Dergi Adı: International Journal of Applied Electromagnetics and Mechanics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.3-13
  • Anahtar Kelimeler: Antiferromagnets, spin Hall effect, VNA-FMR, electronic transport
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

Manipulation of antiferromagnetic sublattice orientations, a key challenge in spintronic device applications, requires unconventional methods such as current induced torques including Spin Transfer Torque (STT) and Spin-Orbit Torque (SOT). In order to observe the deviation of the Néel vector from the anisotropy axis, one of the simplest approaches is the electrical detection, whereby one monitors the change in resistance as a function of applied current. In this work, we have investigated the conditions under which an ultra-thin metallic antiferromagnet, Ir20Mn80 becomes susceptible to SOT effects by studying antiferromagnetic layer structure and thickness dependence in antiferromagnetic metal (Ir20Mn80)/heavy metal (Pt) superlattices. Our electrical measurements reveal that in bilayer structures there exists a shallow range of Ir20Mn80 thicknesses (∼1-2 nm) for which SOT driven control of spins is apparent, whereas for lower thicknesses incomplete sublattice formation and for higher thicknesses improved thermal stability prohibits vulnerability to spin currents. Furthermore, in multilayers, structural changes in Ir20Mn80 layer quenches local torques due to stronger (111) magnetocrystalline anisotropy. These results suggest that an exhaustive optimization of the antiferromagnet parameters is crucial for the successful deployment of spintronic devices.