Spin-Based Data Storage

ÖZATAY, ÖZHAN; Mather, P.G.; Thiele, J.-U.; Hauet, T.; Braganca, P.M.

doi:10.1016/b978-0-12-374396-1.00142-2

Spin-Based Data Storage

ÖZATAY Ö., Mather P., Thiele J., Hauet T., Braganca P.

Comprehensive Nanoscience and Technology, Elsevier, ss.561-614, 2011

Yayın Türü: Kitapta Bölüm / Araştırma Kitabı
Basım Tarihi: 2011
Doi Numarası: 10.1016/b978-0-12-374396-1.00142-2
Yayınevi: Elsevier
Sayfa Sayıları: ss.561-614
Anahtar Kelimeler: Giant magnetoresistance (GMR), Hard-disk drive (HDD), Heat-assisted magnetic recording (HAMR), Magnetic random access memory (MRAM), Magnetic storage, Magnetic tunnel junction (MTJ), Microwave-assisted magnetic recording (MAMR), Nanofabrication challenges, Nanomagnetism, Patterned media, Race-track memory, Spin transfer torque (STT), Spin transport, Spintronics, Thermally assisted recording (TAR)
Boğaziçi Üniversitesi Adresli: Evet

Özet

The utilization of spin degrees of freedom in mesoscopic systems finds variety of applications in nanoscale devices. The emerging memory applications of spin systems constitute a major class of studies in nanomagnetics research. Here, we introduce the fundamental driving force behind magnetic memory technologies such as nonvolatility, efficient power consumption, long-term reliability, scalability, and low cost in comparison to other solid-state memory technologies. More specifically, we discuss various emerging data storage technologies, including magnetic random access memory, hard-disk drive technologies (energy-assisted recording, bit-patterned media), and three-dimensional magnetic storage approaches such as race-track memory together with the nanofabrication challenges for future spin-based memory devices.