Semi-empirical aging model development via accelerated aging test


Afacan E., DÜNDAR G., PUSANE A. E., BAŞKAYA İ. F.

13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016, Lisbon, Portekiz, 27 - 30 Haziran 2016, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/smacd.2016.7520720
  • Basıldığı Şehir: Lisbon
  • Basıldığı Ülke: Portekiz
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

Modelling of the degradation mechanisms has a crucial role during the aging analysis, which determines the accuracy of the lifetime estimation. Conventionally, analytical and semi-empirical models are utilized during the aging analysis. Analytical models employ deterministic equations during the degradation calculation and they can be scaled for different technology nodes; hence providing flexibility. However, scaling errors and approximations during the model development may degrade the accuracy. On the other hand, semi-empirical models are generated via accelerated aging test (AAT) performed on the silicon, which often promise more reliable results for a given technology. This paper comprehensively examines the semi-empirical modelling process from test chip design to AAT experiments.