An ultra low-power dual-band IR-UWB transmitter in 130-nm CMOS

Batur O. Z., Akdag E., Akkurt H., ÖNCÜ A., KOCA M., DÜNDAR G.

IEEE Transactions on Circuits and Systems II: Express Briefs, cilt.59, sa.11, ss.701-705, 2012 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 59 Sayı: 11
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1109/tcsii.2012.2218474
  • Dergi Adı: IEEE Transactions on Circuits and Systems II: Express Briefs
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.701-705
  • Anahtar Kelimeler: CMOS, digital, dual band, impulse radio, low power, pulse generator, radio-frequency (RF) integrated circuit, transmitter, ultrawideband (UWB)
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm2. At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 μW, respectively. The lower and the upper band 'off-time' power consumptions of the transmitter are 0.36 and 1.7 μW, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band. © 2004-2012 IEEE.