20th Nordic Semiconductor Meeting, NSM20, Tampere, Finlandiya, 25 - 27 Ağustos 2003, cilt.T114, ss.184-187, (Tam Metin Bildiri)
This paper presents experimental results on MEMS metallic addon postfabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electrical parameters of n-channel and p-channel transistors. The magnetron sputtering technique is shown to be compatible with standard CMOS electronics without any restriction of the metal types and annealing requirements. © Physica Scripta 2004.