Deep reactive ion etching for high aspect ratio microelectromechanical components

Jensen S., YALÇINKAYA A. D., Jacobsen S., Rasmussen T., Rasmussen F. E., Hansen O.

20th Nordic Semiconductor Meeting, NSM20, Tampere, Finlandiya, 25 - 27 Ağustos 2003, cilt.T114, ss.188-192, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: T114
  • Doi Numarası: 10.1088/0031-8949/2004/t114/047
  • Basıldığı Şehir: Tampere
  • Basıldığı Ülke: Finlandiya
  • Sayfa Sayıları: ss.188-192
  • Boğaziçi Üniversitesi Adresli: Evet

Özet

A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicononinsulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented. © Physica Scripta 2004.